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MJE802 Datasheet(PDF) 1 Page - STMicroelectronics |
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MJE802 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() MJE802 MJE803 SILICON NPN POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM January 1997 3 2 1 SOT-32 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Base-Emitter Voltage (IC = 0) 5V IC Collector Current 4A IB Base Current 0.1 A Ptot Total Power Dissipation at Tcase ≤ 25 oC 40 W Tstg Storage Temperature -65 to 150 oC Tj Max Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. 1/4 |
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