AD8512-EP

Enhanced Product

Rev. 0 | Page 4 of 7

ELECTRICAL CHARACTERISTICS

VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

0.1

1.0

mV

−55°C < TA < +125°C

1.8

mV

Input Bias Current

IB

25

80

pA

−55°C < TA < +85°C

0.7

nA

−55°C < TA < +125°C

10

nA

Input Offset Current

IOS

6

75

pA

−55°C < TA < +85°C

0.3

nA

−55°C < TA < +125°C

0.5

nA

Input Capacitance

Differential

12.5

pF

Common Mode

11.5

pF

Input Voltage Range

−13.5

+13.0

V

Common-Mode Rejection Ratio

CMRR

VCM = −12.5 V to +12.5 V

86

108

dB

Large-Signal Voltage Gain

AVO

RL = 2 kΩ, VCM = 0 V,

VO = −13.5 V to +13.5 V

115

196

V/mV

Offset Voltage Drift

ΔVOS/ΔT

1.7

12

µV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

RL = 10 kΩ

14.0

14.2

V

RL = 2 kΩ

13.8

14.1

V

RL = 600 Ω

13.5

13.9

V

RL = 600 Ω, −55°C < TA < +125°C

11.4

V

Output Voltage Low

VOL

RL = 10 kΩ, −55°C < TA < +125°C

−14.9

−14.6

V

RL = 2 kΩ, −55°C < TA < +125°C

–14.8

−14.5

V

RL = 600 Ω

−14.3

−13.8

V

RL = 600 Ω, −55°C < TA < +125°C

−12.1

V

Output Current

IOUT

±70

mA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = ±4.5 V to ±18 V

86

dB

Supply Current/Amplifier

ISY

VO = 0 V

2.2

2.5

mA

−55°C < TA < +125°C

2.6

mA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 2 kΩ

20

V/µs

Gain Bandwidth Product

GBP

8

MHz

Settling Time

tS

To 0.1%, 0 V to 10 V step, G = +1

0.5

µs

To 0.01%, 0 V to 10 V step, G = +1

0.9

µs

Total Harmonic Distortion (THD) + Noise

THD + N

1 kHz, G = +1, RL = 2 kΩ

0.0005

%

Phase Margin

φM

52

Degrees

NOISE PERFORMANCE

Voltage Noise Density

en

f = 10 Hz

34

nV/√Hz

f = 100 Hz

12

nV/√Hz

f = 1 kHz

8.0

10

nV/√Hz

f = 10 kHz

7.6

nV/√Hz

Peak-to-Peak Voltage Noise

en p-p

0.1 Hz to 10 Hz bandwidth

2.4

5.2

µV p-p