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STP16NE06L/FP Datasheet(PDF) 1 Page - STMicroelectronics |
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STP16NE06L/FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ™ POWER MOSFET TARGET DATA s TYPICAL RDS(on) = 0.09 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s 175 oC OPERATING TEMPERATURE s HIGH dV/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Un it ST P16NE06L STP16NE06LF P VDS Drain-source Volt age (VGS =0) 60 V VDGR Drain- gate Volt age (RGS =20 k Ω)60 V VGS Gat e-source Voltage ± 15 V ID Drain Current (continuous) at Tc =25 oC16 11 A ID Drain Current (continuous) at Tc =100 oC10 7 A IDM( •) Drain Current (pulsed) 64 64 A Ptot Tot al Dissipation at Tc =25 oC60 30 W Derating F act or 0.4 0.2 W / oC VISO Insulation W ithst and Voltage (DC) 2000 V dV/ dt Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 175 oC Tj Max. O perat ing Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 16 A,di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST P16NE06L ST P16NE06LFP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A October 1997 TO-220 TO-220FP 1 2 3 1 2 3 1/7 |
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