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STP16NE06L/FP Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP16NE06L/FP
Description  N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP16NE06L/FP Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD =30 V
ID =8 A
RG =4.7 W
VGS =5V
ns
ns
Qg
Qgs
Qgd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =16 A
VGS =5 V
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
VDD =48 V
ID =16 A
RG =4.7
Ω VGS =5 V
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
A
A
VSD (
∗)Forward On Voltage
ISD =16 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 16 A
di/ dt = 100 A/
µs
VDD =30 V
Tj = 150
oC
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STP16NE06L/FP
3/7



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