AMIS-42670 datasheet(7/12 Pages) AMI

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AMIS-42670 High-Speed CAN Transceiver

Data Sheet

For Long Networks

Table 7: DC and Timing Characteristics (continued)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Ci(CANH)

Input capacitance at pin CANH

VTxD = VCC; not tested

7.5

Ci(CANL)

Input capacitance at pin CANL

VTxD = VCC; not tested

7.5

Ci(dif)

Differential input capacitance

VTxD = VCC; not tested

3.75

ILI(CANH)

Input leakage current at pin CANH

VCC = 0V; VCANH = 5V

170

250

µA

ILI(CANL)

Input leakage current at pin CANL

VCC = 0V; VCANL = 5V

170

250

µA

VCM-peak

Common-mode peak during transition from

dom

→ rec or rec → dom

See Figure 8 and Figure 9

-500

500

VCM-step

Difference

common-mode

between

dominant and recessive state

See Figure 8 and Figure 9

-150

150

Power-on-Reset (POR)

PORL

POR level

CANH, CANL, Vref in tri-

state below POR level

2.2

3.5

4.7

Thermal Shutdown

Tj(sd)

Shutdown junction temperature

150

160

180

°C

Timing Characteristics (see Figure 6 and Figure

td(TxD-BUSon)

Delay TxD to bus active

Vs = 0V

130

td(TxD-BUSoff)

Delay TxD to bus inactive

Vs = 0V

105

td(BUSon-RxD)

Delay bus active to RxD

Vs = 0V

105

td(BUSoff-RxD)

Delay bus inactive to RxD

Vs = 0V

100

135

tpd(rec-dom)

Propagation delay TxD to RxD from

recessive to dominant

Vs = 0V

245

td(dom-rec)

Propagation delay TxD to RxD from

dominant to recessive

Vs = 0V

100

245

8.5 Measurement Set-ups and Definitions

Figure 4: Test Circuit for Transients

AMIS-

42670

VCC

GND

CANH

CANL

VREF

PC20070831.1

RxD

TxD

1 nF

100 nF

+5 V

20 pF

1 nF

Transient

Generator

Figure 5: Hysteresis of the Receiver

RxD

i(dif)(hys)

High

Low

0,5

0,9

PC20040829.7

Hysteresis

AMI Semiconductor

– October 07, Rev. 1.0

AMIS-42670 Datasheet(PDF) 7 Page - AMI SEMICONDUCTOR

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