CR05BS-8_07 datasheet(2/5 Pages) RENESAS

2 / 5 page

CR05BS-8

REJ03G0347-0200 Rev.2.00 Mar 22, 2007

Page 2 of 4

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

IT (RMS)

0.15

Average on-state current

IT (AV)

0.1

Commercial frequency, sine half wave

180° conduction, Ta = 55°C

Surge on-state current

ITSM

60Hz sine half wave 1 full cycle,

peak value, non-repetitive

2t for fusing

0.4

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

PGM

0.1

Average gate power dissipation

PG (AV)

0.01

Peak gate forward voltage

VFGM

Peak gate reverse voltage

VRGM

Peak gate forward current

IFGM

0.1

Junction temperature

– 40 to +125

°C

Storage temperature

Tstg

– 40 to +125

°C

Mass

—

Typical value

Notes: 1. With gate to cathode resistance RGK = 1 k

Ω.

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak reverse current

IRRM

—

0.1

Tj = 125°C, VRRM applied

Repetitive peak off-state current

IDRM

—

0.1

Tj = 125°C, VDRM applied,

RGK = 1 k

Ω

On-state voltage

VTM

—

1.9

Ta = 25°C, ITM = 1.5 A,

instantaneous value

Gate trigger voltage

VGT

—

0.8

Tj = 25°C, VD = 6 V, IT = 0.1 A

Gate non-trigger voltage

VGD

0.2

—

Tj = 125°C, VD = 1/2 VDRM,

RGK = 1 k

Ω

Gate trigger current

IGT

—

100

µA

Tj = 25°C, VD = 6 V, IT = 0.1 A

Holding current

—

3.0

Tj = 25°C, VD = 12 V,

RGK = 1 k

Ω

Thermal resistance

Rth (j-a)

—

500

°C/W

Junction to ambient

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