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2SC3156 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3156 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3156 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A 2.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.4A ; VCE=5V 10 hFE-2 DC current gain IC=2A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V, f=1MHz 120 pF fT Transition frequency IC=0.4A ; VCE=10V 15 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=400V ,RL=100Ω 0.7 μs |
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