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2SC3156 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3156 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3156 DESCRIPTION ·With TO-3 package ·High breakdown voltage : VCBO=900V(Min) ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICP Collector current-peak PW≤300μs, Duty Cycle≤10% 20 A IB Base current 3 A PC Collector power dissipation TC=25℃ 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3) and symbol |
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