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SMB139 Datasheet(PDF) 13 Page - Summit Microelectronics, Inc. |
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SMB139 Datasheet(HTML) 13 Page - Summit Microelectronics, Inc. |
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13 / 27 page ![]() SMB139 Summit Microelectronics, Inc 2121 3.0 6/19/2008 13 EXTERNAL COMPONENTS Input and Output Capacitors The SMB139 allows for the use of low-cost ceramic capacitors on both the input and the output. The minimum input capacitance value is 2.2 µF. The minimum output capacitance of 2.2 µF is desired in parallel with the battery installed on the BATT pin. A 1 µF ceramic capacitor is recommended on the VDDCAP pin to bypass the internal band-gap voltage. Taking account of the temperature and DC bias degrading characteristics of ceramic capacitors, one is encouraged to select X5R or X7R rated ceramic capacitors. BOARD LAYOUT RECOMMENDATIONS The most critical components for the reliable operations of the SMB139 are the output capacitor, the input capacitor, and the bypass capacitor for VDDCAP. Place those as close as possible to the SMB139. Pour sufficient copper along the power delivery path, namely, from the power source to the IN pin and from the OUT pin to the battery. This minimizes the distribution loss, therefore buys an additional margin for the IN-to-OUT drop-out voltage. Route the TRICKLE pin, the SENSE pin, and the BATT pin to the positive terminal of the battery by traces wider than 10mils. To increase ease of layout and future manufacturing, GND from C2 and D2 can be routed through NC, D1 and a GND via placed just outside the balls, connecting the GND balls to the GND plane. A via under the CSP part can cause solder to wick up and push up on the CSP, preventing a good solder connection to the board. Additionally VDDCAP (B2) may be run through B3 CHGSET to prevent the need for pad shaving, if minimum trace widths will not fit between a 0.4mm pitch. POWER DISSIPATION The SMB139 incorporates a thermal regulation circuit that reduces charge current when die temperature rises to high levels (greater than 110 oC). The conditions under which this charge current reduction finds place can be determined by calculating device power dissipation. Most of the SMB139 power dissipation is generated in the internal power MOSFET. The worst- case scenario occurs when the input voltage is at its highest level and the device has transitioned from the pre-charge to the fast-charge phase. In this case, both the input-to-output differential and the charge current level are large, resulting in high thermal dissipation. Actual power dissipation can be calculated by using the following formula: PDACTUAL = (VIN – VBATT) x IOUT Where: VIN = input (adapter or USB port) voltage VBATT = battery voltage IOUT = charge current Assuming the SMB139 operates from a 5V ±10% (worst case: 5.5V) supply and is configured to deliver a charge current of 120mA to a discharged Li-Ion battery with a voltage of 3.6V, the power dissipation can be calculated as follows: PDACTUAL = (5.5V – 3.6V) x 0.12A = 228mW The maximum allowable power dissipation for a specific package and board layout can be calculate by using the following formula: PDMAXIMUM = (TJ – TA) / ThetaJA Where: TJ = maximum allowable junction (silicon) temperature TA = maximum ambient temperature ThetaJA = package thermal resistance (depends highly on board layout) Combining the two formulas (actual and maximum allowable power dissipation) allows the user to calculate the ambient temperature at which the SMB139 will start reducing charge current for safe operation. By using our example above and an estimated ThetaJA of 60 oC/W, the ambient temperature can be calculated as follows: TA = TJ – (PDMAXIMUM x ThetaJA) = TJ – (VIN – VBATT) x IOUT x ThetaJA = 110 oC – (5.5V – 3.6V) x 0.12A x 60oC/W = 96.32 oC APPLICATIONS INFORMATION (CONTINUED) |
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