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MASW4030G Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASW4030G Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 4 page ![]() 1 GaAs SPDT Switch DC - 4.0 GHz Rev. V4 MASW4030G • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Absorbtive or Reflective • Excellent Intermodulation Products • Excellent Temperature Stability • Fast Switching Speed: 3 ns Typical • Ultra Low DC Power Consumption • Independent Bias Control Description The MASW4030G is an SPDT absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4030G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability. Ordering Information Part Number Package MASW4030G DIE Bond Pad Dimensions Schematic Pad Layout G1 RF G1 RF1 RF2 B A B C A C G2 G2 G1 RF G1 RF1 RF2 B A B C A C G1 RF G1 RF1 RF2 B A B C A C G2 G2 Control Value (A or B) -8.5 Vdc Max Input RF Power +34.0 dBm (500 MHz - 4 GHz) Storage Temperature -65°C to +175°C Operating Temperature +175°C Parameter Absolute Maximum Absolute Maximum Rating 1,2 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. Bond Pad Dimensions - Inches (mm) G1 0.004 x 0.008 (0.100 x 0.200) RF1, RF2 0.004 x 0.008 (0.100 x 0.200) T 0.0065 x 0.13 (0.165 x 0.330) A, B, Ac, Bc, G2 0.004 x 0.004 (0.100 x 0.100) RF 0.008 x 0.006 (0.200 x 0.150) T T Die Size - Inches (mm) 0.042 x 0.040 x 0.010 (1.065 x 1.015 x 0.25) |
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