TPC8041

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8041

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

• Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

13

Drain current

Pulse (Note 1)

52

A

Drain power dissipation

(t

= 10 s)

(Note 2a)

1.9

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

1.0

W

Single pulse avalanche energy

(Note 3)

44

mJ

Avalanche current

13

A

Repetitive avalanche energy

(Note 2a) (Note 4)

0.066

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Note 1, Note 2, Note 3 and Note 4: See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-6J1B

Weight: 0.08 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4