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CLE400F Datasheet(PDF) 1 Page - Clairex Technologies, Inc

Part # CLE400F
Description  Four leaded Multiple Emitter Chip Surface Mount Package
PDF  1 Pages
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Manufacturer  CLAIREX [Clairex Technologies, Inc]
Direct Link  http://www.clairex.com
Logo CLAIREX - Clairex Technologies, Inc

CLE400F Datasheet(HTML) 1 Page - Clairex Technologies, Inc

  CLE400F Datasheet HTML 1Page - Clairex Technologies, Inc  
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Clairex Technologies, Inc.
1301 East Plano Parkway
Plano, Texas 75074-8524
Phone: 972-265-4900
Fax: 972-265-4949
www.clairex.com
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
CLE400F
Four leaded Multiple Emitter Chip
Surface Mount Package
Clairex
Technologies, Inc.
March, 2002
features
• ±70° emission angle
• wide variety of chip combinations
• wide variety of lenses and apertures
description
The CLE400F can contain three 850
nm IRED chips which feature double/
double heterojunction (DDH)
construction for increased quantum
efficiency and reliability. This device
is one example of a very broad line of
devices made possible by four leaded
package configuration. One to three
chips can be attached. Multiple chip
devices can be series or parallel
connected. Wavelengths can range
from ultra-violet (390nm) through the
visible spectrum into the near infrared
(940nm). Also different lenses,
apertures and lead configurations
are available. The standard lensing is
clear epoxy.
absolute maximum ratings (TA = 25°C unless otherwise stated)
storage temperature........................................................................-40°C to +100°C
operating temperature.....................................................................-40°C to +100°C
lead soldering temperature
(1)...........................................................................260°C
continuous forward current
(2)..............................................................20mA/per chip
peak forward current (1.0ms pulse width, 10% duty cycle) .................................. 1A
reverse voltage..................................................................................................... 5V
continuous power dissipation
(3) .......................................................................80mW
notes:
1.
For 5 seconds maximum
2.
Derate linearly 0.213mA/°C from 25°C free air temperature to TA = +100°C.
3.
Derate linearly 0.85mW/°C from 25°C free air temperature to TA = +100°C.
®
electrical characteristics (TA = 25°C unless otherwise noted)
symbol
parameter
min
typ
max
units
test conditions
PO
Total power output
(4)
9.0
13.0
-
mW
IF = 60mA
(total cathode current)
VF
Forward voltage
-
-
1.4
V
IF = 20mA per chip
IR
Reverse current
-
-
10
µA
VR = 5V
λp
Peak wavelength emission
-
850
-
nm
IF = 20mA
BW
Spectral bandwidth at half power points
-
60
-
nm
IF = 20mA
θHP
Emission angle at half power points
-
140
-
deg.
IF = 20mA
note: 4. Power output is measured in an integrating sphere.
All dimensions are in inches (millimeters).
Unless otherwise indicated, tolerance is ± 0.005 (0.12)
PIN 1 MARK
0.110 (2.81)
0.038 (0.97)
0.006 (0.15)
0.028 (0.71)
0.006 (0.15)
0.032 (0.81)
0.056 (1.42)
0.066 (0.68)
0.063 (1.60)
0.063 (1.60)
0.275 ± 0.010
0.056 (1.42)
025 (0.63)
0.012 (0.30)
(6.99 ± 0.25)
1
23
4
0.075 (1.89)
1
2
3
4
0.025 (0.63)
Revised 4/17/07
0.069 (1.75)
0.110 (2.81)


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