MS8001 – MS8004

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 3

GaAs Schottky Diodes

TM

®

Copyright

 2008

Rev.: 2009-02-17

GaAs Schottky Diodes (Packaged and Bondable Chips)

Typical Characteristics

20

18

16

0.070

0.065

0.060

14

MS8003

12

10

8

6

MS8001

4

2

0

0.055

0.050

0.045

0.040

0.035

0.030

0.025

0.020

0.015

0.010

3

4

5

6

7

8

9

10 11 12 13

0

1

2

3

4

5

6

7

8

9

10

LO Power (dBm)

Noise Figure (dB) @ 24 GHz

(Balanced Mixer)

Reverse Bias Voltage (V)

Junction Capacitance

The quoted noise figure (NF) is a single side band NF measured at LO

power of 6 dBm for a single, and 10 dBm for a balanced mixer with a

30 MHz IF amplifier with a noise figure of 1.5 dB.

100

10

125°C

1

0.1

0.01

25°C

-55°C

0.001

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Forward Voltage (V)

I-V Characteristics for

GaAs Schottky Diode