MS8001 – MS8004

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

GaAs Schottky Diodes

TM

®

Copyright

 2008

Rev.: 2009-02-17

Packaged and Bondable Chips

Features

●

Low-Noise Performance

●

High Cut-off Frequency

●

Passivated to Enhance Reliability

●

Packaged Diodes and Bondable Chips

Applications

●

Single and Balanced Mixers and Detectors

●

Transceivers X, K and Ka Bands

●

30 and 60 GHz Radios

●

Automotive Radar Detectors

Incident Power

100 mW @ 25°C

Derate Linearly to 0 at 175°C

Forward Current

15 mA @ 25°C

Reverse Voltage

5 V

Operating Temperature

-55°C to +175°C

Storage Temperature

-55°C to +200°C

Maximum Ratings

Description

Microsemi’s MS8000 series of GaAs Schottky barrier

diodes are available in packaged form and bondable

chip configurations. These Schottky devices have low

series resistance and low junction capacitance. The

resulting low noise figure makes these diodes suitable

for sensitive mixer and detector applications from

below X band to beyond Ka band frequencies.

Ordering Information

P00 is the designation for the bondable chip Schottky (e.g.

MS8001-P00). Packaged diodes are designated by the

package outline number (e.g. MS8001-30)

IMPORTANT:

For the most current data, consult our website: www.MICROSEMI.com

Specifications are subject to change. Consult factory for the latest information

.

These devices are ESD sensitive and must be handled using ESD precautions.

supplied with a RoHS complaint Gold finish

.