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2 of 5

3/21/2005 Rev.2.01

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Drain-Source Breakdown Voltage

60

-

-

V

Breakdown Voltage Temperature Coefficient

-

0.073

-

V/°C

Static Drain-Source On-Resistance

2

-

-

40

m

Ω

-

-

50

m

Ω

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

10

-

S

-

-

1

uA

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

19

30

nC

Gate-Source Charge

-

5

-

nC

Gate-Drain ("Miller") Charge

-

10

-

nC

Turn-on Delay Time

2

-

11

-

ns

Rise Time

-

6

-

ns

Turn-off Delay Time

-

35

-

ns

Fall Time

-10

-

ns

Input Capacitance

-

1670 2670

pF

Output Capacitance

-

160

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

116

-

pF

Gate Resistance

f=1.0MHz

-

1.58

-

Ω

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Forward On Voltage

2

-

-

1.2

V

Reverse Recovery Time

-

34

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

50

-

nC

Notes:

1.Pulse width limited by max. junction temperature.

2.Pulse width <300us , duty cycle <

2%.

3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.

SSM9475M

ELECTRICAL CHARACTERISTICS @ T = 25 C (unless otherwise specified)

j

o

SOURCE-DRAIN DIODE