SSM9475M datasheet(4/5 Pages) SSC

Part #	SSM9475M

Description	N-channel Enhancement-mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

td(on) tr

td(off)tf

VDS

VGS

10%

90%

4.5V

QGS

QGD

Charge

100

1000

10000

1317

2125

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

2030

4050

Q G , Total Gate Charge (nC)

V DS = 30 V

V DS = 38 V

V DS = 48 V

I D = 6 A

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

1000

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 125°C/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

1ms

10ms

100ms

T A =25

o C

Single Pulse

SSM9475M

3/21/2005 Rev.2.01

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