PESDXS2UAT datasheet(2/13 Pages) NXP

2 / 13 page

2004 Feb 18

NXP Semiconductors

Product data sheet

Double ESD protection diodes

in SOT23 package

PESDxS2UAT series

FEATURES

• Unidirectional ESD protection of up to two lines

• Common-cathode configuration

• Max. peak pulse power: P

pp = 330 W at tp = 8/20 µs

• Low clamping voltage: V

(CL)R = 20 V at Ipp = 18 A

• Ultra-low reverse leakage current: I

RM < 700 nA

• ESD protection > 30 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); I

pp = 18 A at tp = 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• Data lines

• CAN bus protection.

DESCRIPTION

Unidirectional double ESD protection diodes in common

cathode configuration in the SOT23 plastic package.

Designed to protect up to two transmission or data lines

against damage from ElectroStatic Discharge (ESD) and

other transients.

MARKING

Note

* = p : made in Hong Kong.

* = t : made in Malaysia.

* = W : made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER

MARKING CODE(1)

PESD3V3S2UAT

*7A

PESD5V0S2UAT

*7B

PESD12VS2UAT

*7C

PESD15VS2UAT

*7D

PESD24VS2UAT

*7E

SYMBOL

PARAMETER

VALUE

UNIT

VRWM

reverse stand-off

voltage

3.3, 5, 12, 15

and 24

diode capacitance

VR = 0 V;

f = 1 MHz

207, 152, 38, 32

and 23

number of

protected lines

DESCRIPTION

anode 1

anode 2

common cathode

sym002

001aaa401

Fig.1 Simplified outline (SOT23) and symbol.

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