PESDXS2UAT datasheet(6/13 Pages) NXP

6 / 13 page

2004 Feb 18

NXP Semiconductors

Product data sheet

Double ESD protection diodes

in SOT23 package

PESDxS2UAT series

Notes

Non-repetitive current pulse 8/20

µs exponential decay waveform; see Fig.2.

Measured either across pins 1 and 3 or pins 2 and 3.

Rdiff

differential resistance

PESD3V3S2UAT

IR = 1 mA

−

400

Ω

PESD5V0S2UAT

IR = 1 mA

−

Ω

PESD12VS2UAT

IR = 1 mA

−

200

Ω

PESD15VS2UAT

IR = 1 mA

−

225

Ω

PESD24VS2UAT

IR = 0.5 mA

−

300

Ω

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

GRAPHICAL DATA

001aaa147

103

102

104

Ppp

(W)

tp (µs)

1104

103

102

(1)

(2)

Fig.4

Peak pulse power dissipation as a function

of pulse time; typical values.

Tamb = 25 °C.

tp = 8/20 µs exponential decay waveform; see Fig.2.

(1) PESD3V3S2UAT and PESD5V0S2UAT.

(2) PESD12VS2UAT, PESD15VS2UAT, PESD24VS2UAT

Tj (°C)

200

150

100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

Fig.5

Relative variation of peak pulse power as a

function of junction temperature; typical

values.

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