MMDF2P02E

http://onsemi.com

5

100

1

100

10

10

0.4

0.8

1.2

2

1.6

0.6

0.8

1.2

1.4

1.6

1

0

VGS = 0 V

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage

versus Current

t, TIME

di/dt = 300 A/

ms

Standard Cell Density

High Cell Density

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define

the maximum simultaneous drain−to−source voltage and

drain current that a transistor can handle safely when it is

forward biased. Curves are based upon maximum peak

°C.

Peak repetitive pulsed power limits are determined by using

the thermal response data in conjunction with the procedures

discussed in AN569, “Transient Thermal Resistance −

General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

ms. In addition the

total power averaged over a complete switching cycle must

A power MOSFET designated E−FET can be safely used

in switching circuits with unclamped inductive loads. For

reliable operation, the stored energy from circuit inductance

dissipated in the transistor while in avalanche must be less

than the rated limit and must be adjusted for operating

conditions differing from those specified. Although industry

practice is to rate in terms of energy, avalanche energy

capability is not a constant. The energy rating decreases

non−linearly with an increase of peak current in avalanche

and peak junction temperature.

Although many E−FETs can withstand the stress of

drain−to−source avalanche at currents up to rated pulsed

custom. The energy rating must be derated for temperature

as shown in the accompanying graph (Figure 13). Maximum

assumed to equal the values indicated.