MMDF2P02ER2 datasheet(1/7 Pages) ONSEMI

Part #	MMDF2P02ER2

Description	Power MOSFET 2 Amps, 25 Volts P?묬hannel SO??, Dual

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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April, 2006 − Rev. 8

1

Publication Order Number:

MMDF2P02E/D

MMDF2P02E

Power MOSFET

2 Amps, 25 Volts

P−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOS

t

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

Features

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• IDSS Specified at Elevated Temperatures

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• Pb−Free Package is Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

25

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 20

Vdc

Drain Current − Continuous @ TA = 25°C

Drain Current − Continuous @ TA = 100°C

Drain Current − Single Pulse (tp ≤ 10 ms)

ID

IDM

2.5

1.7

13

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note

2)

Derate above 25

°C

PD

2.0

16

W

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

−55 to 150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 10 Vdc, Peak

IL = 7.0 Apk, L = 10 mH, RG = 25 W)

EAS

245

mJ

Thermal Resistance, Junction−to−Ambient

(Note 2)

RqJA

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 0.0625

″ from case for 10 sec.

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Negative sign for P−Channel device omitted for clarity.

2. Mounted on 2

″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−2

D

S

G

2 AMPERES, 25 VOLTS

RDS(on) = 250 mW

Device

Package

Shipping†

ORDERING INFORMATION

MMDF2P02ER2

SO−8

2500 Tape & Reel

SO−8, Dual

CASE 751

STYLE 11

P−Channel

MARKING

DIAGRAM

PIN ASSIGNMENT

MMDF2P02ER2G

SO−8

(Pb−Free)

2500 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

8

F2PO2

AYWW

G

1

8

F2P02

= Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

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