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FMMT591 Datasheet(PDF) 4 Page - Diodes Incorporated |
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FMMT591 Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page ![]() FMMT591 Issue 4 - September 2007 4 www.zetex.com © Zetex Semiconductors plc 2007 Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -80 V IC = -100 A Collector-emitter breakdown voltage BVCEO -60 V IC = -10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. Emitter-base breakdown voltage BVEBO -7 -8.1 V IE = -100 A Collector cut-off current ICBO <1 -100 nA VCB = -60V Collector – emitter current cut-off current ICES <1 -100 nA Emitter cut-off current IEBO <1 -100 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -155 -180 mV IC = -0.5A, IB = -50mA(*) -295 -350 mV IC = -1A, IB = -100mA(*) Base-emitter saturation voltage VBE(sat) 965 -1200 mV IC = -1A, IB = -100mA(*) Base-emitter turn-on voltage VBE(on) 830 -1000 mV IC = -1A, VCE = -5V(*) Static forward current transfer ratio hFE 100 220 IC = -1mA, VCE = -5V(*) 100 175 300 IC = -500mA, VCE = -5V(*) 80 155 IC = -1A, VCE = -5V 15 40 IC = -2A, VCE = -5V Transition frequency fT 150 MHz IC = -50mA, VCE = -10V f = 100MHz Output capacitance COBO 10 pF VCB = -10V, f = 1MHz(*) |
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