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50N06L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 50N06L-TN3-R
Description  50 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

50N06L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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50N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-088.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
TC = 25°C
50
A
Continuous Drain Current
TC = 100°C
ID
35
A
Pulsed Drain Current (Note 2)
IDM
200
A
Single Pulsed (Note 3)
EAS
480
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
V/ns
TO-220
120
W
TO-220F
70
W
TO-251
136
W
Power Dissipation (TC=25°C)
TO-252
PD
136
W
Junction Temperature
TJ
+150
°C
Operation and Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C
4. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
TO-220
62
°C/W
TO-220F
62
°C/W
TO-251
100
°C/W
Junction to Ambient
TO-252
θJA
100
°C/W
TO-220
1.24
°C/W
TO-220F
1.78
°C/W
TO-251
1.1
°C/W
Junction to Case
TO-252
θJC
1.1
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
60
V
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
Forward
VGS = 20V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -20V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 250 μA,
Referenced to 25°C
0.07
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 25 A
18
23
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
900 1220
pF
Output Capacitance
COSS
430
550
pF
Reverse Transfer Capacitance
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
80
100
pF



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