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50N06L-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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50N06L-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page ![]() 50N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-088.E ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 40 60 ns Turn-On Rise Time tR 100 200 ns Turn-Off Delay Time tD(OFF) 90 180 ns Turn-Off Fall Time tF VDD = 30V, ID =25 A, RG = 50Ω (Note 1, 2) 80 160 ns Total Gate Charge QG 30 40 nC Gate-Source Charge QGS 9.6 nC Gate-Drain Charge QGD VDS = 48V, VGS = 10 V ID = 50A (Note 1, 2) 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD IS = 50A, VGS = 0 V 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS 50 A Maximum Pulsed Drain-Source Diode Forward Current ISM 200 A Reverse Recovery Time tRR 54 ns Reverse Recovery Charge QRR IS = 50A, VGS = 0 V dIF / dt = 100 A/μs 81 μC Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature |
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