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2SD2083 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2083 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2083 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ,IB= 0 B 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A ,IB= 24mA 2.5 V ICBO Collector Cutoff current VCB= 120V, IE= 0 10 μA IEBO Emitter Cutoff current VEB= 6V, IC= 0 10 mA hFE DC Current Gain IC= 12A ; VCE= 4V 2000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 340 pF fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 20 MHz Switching Times ton Turn-On Time 1.0 μs tstg Storage Time 6.0 μs tf Fall Time IC = 12A,IB1 = -IB2= 24mA; VCC= 24V, RL= 2Ω 1.0 μs isc Website:www.iscsemi.cn |
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