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2SD2083 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD2083
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2083 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD2083
DESCRIPTION
·High DC Current Gain
: hFE= 2000(Min.)@ IC= 12A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
·Complement to Type 2SB1383
APPLICATIONS
·Designed for driver of solenoid, motor and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IB
B
Base Current- Continuous
2
A
PC
Collector Power Dissipation
@TC=25℃
120
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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