UF640

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-066.E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

200

V

200

V

Gate-Source Voltage

±20

V

Continuous Drain Current

18

A

Pulsed Drain Current (Note 2)

72

A

Single Pulse Avalanche Energy Rating (Note 2)

580

mJ

Maximum Power Dissipation

TO-220

123

W

TO-220F

40

TO-220F2

42

TO-252

83

TO-263

139

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note: 1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/ TO-220F

62.5

°C/W

TO-220F2/ TO-263

62.5

TO-252

110

Junction to Case

TO-220

1.01

°C/W

TO-220F

3.1

TO-220F2

2.9

TO-252

1.5

TO-263

0.9

℃

unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

200

V

Drain-Source Leakage Current

25

μA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

On-State Drain Current

18

A

Drain-Source On Resistance

0.14

0.18

Ω

DYNAMIC PARAMETERS

Input Capacitance

1275

pF

Output Capacitance

400

pF

Reverse Transfer Capacitance

100

pF