UNISONIC TECHNOLOGIES CO., LTD

UF640

Power MOSFET

www.unisonic.com.tw

1 of 5

Copyright © 2011 Unisonic Technologies Co., Ltd

QW-R502-066.E

18 A, 200 V, 0.18 OHM,

N-CHANNEL POWER MOSFET

DESCRIPTION

These kinds of n-channel power MOSFET field effect transistor

have low conduction power loss, high input impedance, and high

switching speed, Linear Transfer Characteristics, so can be use in

a variety of power conversion applications.

The UF640 suitable for resonant and PWM converter topologies.

FEATURES

* Ultra Low gate charge (typical 43nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

3.Source

2.Drain

TO-220

TO-263

TO-220F

TO-252

1

1

1

1

1

TO-220F2

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen-Free

1

2

3

UF640L-TA3-T

UF640G-TA3-T

TO-220

G

D

S

Tube

UF640L-TF2-T

UF640G-TF2-T

TO-220F2

G

D

S

Tube

UF640L-TF3-T

UF640G-TF3-T

TO-220F

G

D

S

Tube

UF640L-TN3-R

UF640G-TN3-R

TO-252

G

D

S

Tape Reel

UF640L-TN3-T

UF640G-TN3-T

TO-252

G

D

S

Tube

UF640L-TQ2-R

UF640G-TQ2-R

TO-263

G

D

S

Tape Reel

UF640L-TQ2-T

UF640G-TQ2-T

TO-263

G

D

S

Tube