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CY2DP818ZXC Datasheet(PDF) 5 Page - Cypress Semiconductor |
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CY2DP818ZXC Datasheet(HTML) 5 Page - Cypress Semiconductor |
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5 / 13 page ![]() CY2DP818 Document Number: 38-07061 Rev. *D Page 5 of 13 Maximum Ratings Exceeding maximum ratings [1] may shorten the useful life of the device. These user guidelines are not tested. Storage Temperature: .............................. –65 C to +150 C Ambient Temperature: ............................... –40 C to +85 C Supply Voltage to Ground Potential (Inputs and VDD only) ....................................–0.3 V to 4.6 V Supply Voltage to Ground Potential (Outputs only) ..................................... –0.3 V to VDD + 0.3 V DC Input Voltage ................................ –0.3 V to VDD + 0.3 V DC Output Voltage .............................. –0.3 V to VDD + 0.9 V Power Dissipation ...................................................... 0.75 W Table 3. Power Supply Characteristics Parameter Description Test Conditions Min Typ Max Unit ICC Dynamic Power Supply Current VDD = Max Input toggling 50% Duty Cycle, Outputs Open –1.5 2.0 mA IC Total Power Supply Current VDD = Max Input toggling 50% Duty Cycle, Outputs 50 ohms fL = 100 MHz –– 350 mA IC(Core) Core current when output loads are disabled VDD = Max Input toggling 50% Duty Cycle, Outputs not connected to VTT fL = 100 MHz –– 50 mA Note 1. Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is intended to be a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. |
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