TDA2050 datasheet(3/18 Pages) STMICROELECTRONICS

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TDA2050

Device overview

Doc ID 1461 Rev 3

3/18

The values given in the following table refer to the test circuit VS = ±18 V, Tamb = 25 °C,

f = 1 kHz, unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Supply voltage range

± 4.5

± 25

Quiescent drain current

Vs = ± 4.5

Vs = ± 25

Input bias current

Vs = ± 22

0.1

0.5

µA

VOS

Input offset voltage

Vs = ± 22

± 15

IOS

Input offset current

± 200

Output power

d = 0.5%,

RL = 4 Ω

RL = 8 Ω

Vs = ± 22 V, RL = 8 Ω

d = 10%,

RL = 4 Ω

RL = 8 Ω

Vs = ± 22 V, RL = 8 Ω

Music power IEC268.3 rules

d = 10%, T = 1s

RL = 4 Ω; Vs = ± 22.5 V

Distortion

Po = 0.1 to 24W, RL = 4 Ω, f = 1 kHz

f = 100 to 10 kHz, Po = 0.1 to 18 W

0.03

0.5

Vs = ± 22 V, RL = 8 Ω,

f = 1 kHz, Po = 0.1 to 20 W,

f = 100 Hz to 10 kHz;

Po = 0.1 to 15 W

0.02

0.5

Slew rate

V/µs

Voltage gain (open loop)

f = 1 kHz

Voltage gain (closed loop)

f = 1 kHz

30.5

Power bandwidth (-3dB)

Vi = 200 mW, RL = 4 Ω;

20 to 80.000

Input noise voltage

B = Curve A

B = 22 Hz to 22 kHz

510

µV

Input resistance (pin 1)

500

SVR

Supply voltage rejection

Rg = 22 kΩ, f = 100 Hz;

Vripple = 0.5 VRMS

Efficiency

Po = 28 W, RL = 4 Ω

Po = 25 W, RL = 8 Ω,Vs = ± 22 V,

Tsd-j

Thermal shutdown junction

temperature

150

°C

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