1

Motorola TMOS Power MOSFET Transistor Device Data

Advance Information

Medium Power Surface Mount Products

TMOS Dual N-Channel with

Monolithic Zener ESD Protected Gate

EZFETs

™ are an advanced series of power MOSFETs which

utilize Motorola’s High Cell Density TMOS process and contain

monolithic back–to–back zener diodes. These zener diodes

provide protection against ESD and unexpected transients. These

miniature surface mount MOSFETs feature ultra low RDS(on) and

true logic level performance. They are capable of withstanding high

energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

EZFET devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives.

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Parameter

Symbol

Max

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

20

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 12

Vdc

Drain Current — Continuous @ TA = 25°C (1)

ID

ID

IDM

7.0

4.6

35

Adc

Total Power Dissipation @ TA = 25°C (1)

Linear Derating Factor @ TA = 25°C (1)

PD

2.0

16

Watts

mW/

°C

Total Power Dissipation @ TA = 25°C (2)

Linear Derating Factor @ TA = 25°C (2)

PD

1.39

11.11

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

THERMAL RESISTANCE

Parameter

Symbol

Typ

Max

Unit

Junction–to–Ambient (1)

Junction–to–Ambient (2)

RqJA

—

—

62.5

90

°C/W

(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).

(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).

(3) Repetitive rating; pulse width limited by maximum junction temperature.

DEVICE MARKING

ORDERING INFORMATION

D7N02Z

Device

Reel Size

Tape Width

Quantity

D7N02Z

MMDF7N02ZR2

13

″

12 mm embossed tape

2500 units

This document contains information on a new product. Specifications and information herein are subject to change without notice.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMDF7N02Z/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

D

S

G

CASE 751–05, Style 11

SO–8

MMDF7N02Z

DUAL TMOS

POWER MOSFET

7.0 AMPERES

20 VOLTS

RDS(on) = 27 mW

Motorola Preferred Device

™