MMDF7N02Z datasheet(3/10 Pages) MOTOROLA

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MMDF7N02Z

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

6.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

0.5

1.0

6.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2.0

4.0

0.01

0.04

0.06

2.0

4.0

6.0

8.0

0.05

0.04

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Drain Current

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1.5

2.0

4.0

1.0

100

10,000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 100°C

°C

–55

°C

TJ = 25°C

VGS = 0 V

ID = 7.0 A

TJ = 25°C

VGS = 2.7 V

VGS = 4.5 V

ID = 3.5 A

1.5

2.0

2.5

6.0

8.0

4.5 V

– 50

– 25

100

125

150

TJ = 125°C

1.0

8.0

°C

100

°C

0.5

1.0

1.5

2.0

3.0

10 V

1.9 V

VGS = 1.7 V

2.3 V

4.5 V

TJ = 25°C

9.0

3.0

9.0

0.03

0.02

0.05

0.01

0.02

0.03

0.5

0.1

2.1 V

1000

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