STM32F030C8 datasheet(54/88 Pages) STMICROELECTRONICS

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Electrical characteristics

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6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 85 °C unless otherwise specified.

6.3.11

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Table 36. PLL characteristics

Symbol

Parameter

Value

Unit

Min

Typ

Max

fPLL_IN

PLL input clock(1)

1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible

with the range defined by fPLL_OUT.

1(2)

-24(2)

MHz

PLL input clock duty cycle

40(2)

-60(2)

fPLL_OUT

PLL multiplier output clock

16(2)

-48

MHz

tLOCK

PLL lock time

200(2)

2. Guaranteed by design, not tested in production.

µs

JitterPLL

Cycle-to-cycle jitter

300(2)

Table 37. Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time

TA–40 to +85 °C

53.5

µs

tERASE Page (1 KB) erase time

TA –40 to +85 °C

tME

Mass erase time

TA –40 to +85 °C

IDD

Supply current

Write mode

Erase mode

Vprog

Programming voltage

2.4

3.6

Table 38. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Data based on characterization results, not tested in production.

Unit

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

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