SL3ICS1002F7AF datasheet(10/51 Pages) NXP

10 / 51 page

139037

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Product data sheet

COMPANY PUBLIC

Rev. 3.7 — 9 October 2012

139037

10 of 51

NXP Semiconductors

SL3ICS1002/1202

UCODE G2XM and G2XL

Mechanical specification

8.1 Wafer specification

See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on

UV-tape with electronic fail die marking, BL-ID document number: 1093**”.

8.1.1 Wafer

• Designation:

each wafer is scribed with batch number and

wafer number

• Diameter:

200 mm (8”)

• Thickness:

150

m ± 15 m

• Number of pads

• Pad location:

non diagonal/ placed in chip corners

• Distance pad to pad RFN-RFP

333.0 µm

• Distance pad to pad TP1-RFN:

351.0 µm

• Process:

CMOS 0.14 µm

• Batch size:

25 wafers

• Dies per wafer:

120.000

8.1.2 Wafer backside

• Material:

• Treatment:

ground and stress release

• Roughness:

Ra max. 0.5 m, Rt max. 5 m

8.1.3 Chip dimensions

• Die size without scribe:

0.414 mm x 0.432 mm = 0.178 mm2

• Scribe line width:

x-dimension:56.4

m (width is measured on top metal layer)

y-dimension:56.4

m (width is measured on top metal layer)

8.1.4 Passivation on front

• Type

Sandwich structure

• Material:

PE-Nitride (on top)

• Thickness:

1.75

m total thickness of passivation

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