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SL3ICS1002F7AF Datasheet(PDF) 11 Page - NXP Semiconductors

Part # SL3ICS1002F7AF
Description  UCODE G2XM and G2XL
PDF  51 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

SL3ICS1002F7AF Datasheet(HTML) 11 Page - NXP Semiconductors

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139037
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.7 — 9 October 2012
139037
11 of 51
NXP Semiconductors
SL3ICS1002/1202
UCODE G2XM and G2XL
8.1.5 Au bump
• Bump material:
> 99.9% pure Au
• Bump hardness:
35 – 80 HV 0.005
• Bump shear strength:
> 70 MPa
• Bump height:
18
m
• Bump height uniformity:
– within a die:
± 2
m
– within a wafer:
± 3
m
– wafer to wafer:
± 4
m
• Bump flatness:
± 1.5
m
• Bump size:
– RFP, RFN
60 x 60
m
– TP1, TP2
60 x 60
m
– Bump size variation:
± 5
m
• Under bump metallization:
sputtered TiW
8.1.6 Fail die identification
No inkdots are applied to the wafer.
Electronic wafer mapping (SECS II format) covers the electrical test results and
additionally the results of mechanical/visual inspection.
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BL-ID document number: 1093**”
8.1.7 Map file distribution
See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on
UV-tape with electronic fail die marking, BL-ID document number: 1093**”



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