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STM32F207 Datasheet(PDF) 111 Page - STMicroelectronics |
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STM32F207 Datasheet(HTML) 111 Page - STMicroelectronics |
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111 / 163 page ![]() STM32F205xx, STM32F207xx Electrical characteristics Doc ID 15818 Rev 7 111/163 a Note: ADC accuracy vs. negative injection current: Injecting a negative current on any of the standard (non-robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject negative currents. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.16 does not affect the ADC accuracy. Figure 49. ADC accuracy characteristics 1. Example of an actual transfer curve. 2. Ideal transfer curve. 3. End point correlation line. 4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Table 62. ADC accuracy (1) 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. Symbol Parameter Test conditions Typ Max(2) 2. Based on characterization, not tested in production. Unit ET Total unadjusted error fPCLK2 = 60 MHz, fADC = 30 MHz, RAIN < 10 kΩ, VDDA = 1.8 (3) to 3.6 V 3. If IRROFF is set to VDD, this value can be lowered to 1.65 V when the device operates in a reduced temperature range. ±2 ±5 LSB EO Offset error ±1.5 ±2.5 EG Gain error ±1.5 ±3 ED Differential linearity error ±1 ±2 EL Integral linearity error ±1.5 ±3 |
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