STM8L151F3P6 datasheet(61/112 Pages) STMICROELECTRONICS

61 / 112 page

STM8L151x2, STM8L151x3

Electrical parameters

Doc ID 018780 Rev 4

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In the following table, data is based on characterization results, unless otherwise specified.

Figure 15.

Typ. IDD(LPW) vs. VDD (LSI clock source)

Table 19.

Total current consumption in Low power wait mode at VDD = 1.65 V to 3.6 V

Symbol

Parameter

Conditions(1)(2)

Typ

Max Unit

IDD(LPW)

Supply current in

Low power wait mode

LSI RC osc.

(at 38 kHz)

all peripherals OFF

TA = -40 °C to 25 °C

33.3

μA

TA = 55 °C

3.3

3.6

TA = 85 °C

4.4

TA = 105 °C

6.7

TA = 125 °C

with TIM2 active(3)

TA = -40 °C to 25 °C

3.4

3.7

TA = 55 °C

3.7

TA = 85 °C

4.8

5.4

TA = 105 °C

8.3

TA = 125 °C

11.3 14.5

LSE external

clock(4)

(32.768 kHz)

all peripherals OFF

TA = -40 °C to 25 °C

2.35

2.7

TA = 55 °C

2.42 2.82

TA = 85 °C

3.10 3.71

TA = 105 °C

4.36

5.7

TA = 125 °C

7.20

with TIM2 active (3)

TA = -40 °C to 25 °C

2.46 2.75

TA = 55 °C

2.50 2.81

TA = 85 °C

3.16 3.82

TA = 105 °C

4.51

5.9

TA = 125 °C

7.28

No floating I/Os.

TA > 85 °C is valid only for devices with suffix 3 temperature range.

Timer 2 clock enabled and counter is running.

Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption

(IDD LSE) must be added. Refer to Table 28.

0.00

2.00

4.00

6.00

8.00

10.00

12.00

14.00

16.00

1.6

2.1

2.6

3.1

3.6

VDD [V]

-40°C

25°C

90°C

130°C

ai18217

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