STM8L151F3P6 datasheet(89/112 Pages) STMICROELECTRONICS

89 / 112 page

STM8L151x2, STM8L151x3

Electrical parameters

Doc ID 018780 Rev 4

89/112

Sampling time

VAIN on PF0 fast

channel

VDDA < 2.4 V

0.43(4)(5)

µs

VAIN on PF0 fast

channel

2.4 V

≤ VDDA≤ 3.6 V

0.22(4)(5)

µs

VAIN on slow channels

VDDA < 2.4 V

0.86(4)(5)

µs

VAIN on slow channels

2.4 V

≤ VDDA≤ 3.6 V

0.41(4)(5)

µs

tconv

12-bit conversion time

12 + tS

1/fADC1

16 MHz

1(4)

µs

tWKUP

Wakeup time from OFF

state

3µs

tIDLE

(6)

Time before a new

conversion

TA = +25 °C

1(7)

TA = +70 °C

20(7)

TA = +125 °C

2(7)

tVREFINT

Internal reference

voltage startup time

refer to

Table 41

The current consumption through VREF is composed of two parameters:

- one constant (max 300 µA)

- one variable (max 400 µA), only during sampling time + 2 first conversion pulses.

So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at

1Msps

VREF- or VDDA must be tied to ground.

Guaranteed by design, not tested in production.

Minimum sampling and conversion time is reached for maximum Rext = 0.5 k

Ω.

Value obtained for continuous conversion on fast channel.

The time between 2 conversions, or between ADC1 ON and the first conversion must be lower than tIDLE.

The tIDLE maximum value is ∞ on the “Z” revision code of the device.

Table 45.

ADC1 characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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