STL65DN3LLH5 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STL65DN3LLH5

Description	Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 12 page

December 2010

Doc ID 18323 Rev 1

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12

STL65DN3LLH5

Dual N-channel 30 V, 0.0059

Ω, 19 A

PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Application

Switching applications

Description

This product utilizes the 5th generation of design

rules of ST’s proprietary STripFET™ technology.

The lowest available RDS(on)*Qg, in this chip scale

package, makes this device suitable for the most

demanding DC-DC converter applications, where

high power density is to be achieved.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STL65DN3LLH5

30 V

<0.0065

Ω 19 A (1)

1.

The value is rated according Rthj-pcb

PowerFLAT™ (5x6)

Double island

Table 1.

Device summary

Order code

Marking

Package

Packaging

STL65DN3LLH5

65DN3LLH5

PowerFLAT™(5x6)

Double island

Tape and reel

www.st.com

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STL65DN3LLH5 Datasheet(PDF) 1 Page - STMicroelectronics

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