STL65DN3LLH5 datasheet(3/12 Pages) STMICROELECTRONICS

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STL65DN3LLH5

Electrical ratings

Doc ID 18323 Rev 1

3/12

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 22

(1)

The value is rated according Rthj-c

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

(2)

The value is rated according Rthj-pcb

Drain current (continuous) at TC = 25 °C

(2)

Drain current (continuous) at TC=100°C

11.8

IDM

(3)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC = 25°C

PTOT

(2)

Total dissipation at TC = 25°C

Derating factor

0.03

W/°C

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case (drain) (steady state)

2.08

°C/W

Rthj-pcb

(1)

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Thermal resistance junction-ambient

°C/W

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAV

Not-repetitive avalanche current,

(pulse width limited by TJ max)

18.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAV , VDD = 24 V)

270

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