MJE13005G-D-TN3-R datasheet(4/10 Pages) UTC

4 / 10 page

MJE13005

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 10

www.unisonic.com.tw

QW-R203-018. M



ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

(Note 1)

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC=10mA , IB=0

400

Collector Cutoff Current

ICBO

VCBO=Rated Value,

VBE(OFF)=1.5V

VCBO=Rated Value,

VBE(OFF)=1.5V, TC=100°С

Emitter Cutoff Current

IEBO

VEB=9V, IC=0

SECOND BREAKDOWN

Second Breakdown Collector Current

with bass forward biased

IS/B

See Fig. 11

Clamped Inductive SOA with Base

Reverse Biased

RBSOA

See Fig. 12

ON CHARACTERISTICS

(Note 1)

DC Current Gain

hFE1

IC=0.5A, VCE=5V

hFE2

IC=1A, VCE=5V

hFE3

IC=2A, VCE=5V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=0.2A

0.5

IC=2A, IB=0.5A

0.6

IC=4A, IB=1A

IC=2A, IB=0.5A, Ta=100°С

Base-Emitter Saturation Voltage

VBE (SAT)

IC=1A, IB=0.2A

1.2

IC=2A, IB=0.5A

1.6

IC=2A, IB=0.5A, TC=100°С

1.5

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

IC=500mA, VCE=10V, f=1MHz

MHz

Output Capacitance

COB

VCB=10V, IE=0, f=0.1MHz

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

VCC=125V, IC=2A, IB1=IB2=0.4A,

tP=25μs, Duty Cycle≤1%

0.025

0.1

μs

Rise Time

0.3

0.7

μs

Storage Time

1.7

μs

Fall Time

0.4

0.9

μs

Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle≤10%

Note: 2. Pulse Test: PW=300μs, Duty Cycle≤2%



CLASSIFICATION OF hFE1

RANK

RANGE

15 ~ 20

20 ~ 25

25 ~ 30

30 ~ 40

40 ~ 50

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