MJE13005G-D-TN3-R datasheet(8/10 Pages) UTC

8 / 10 page

MJE13005

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

8 of 10

www.unisonic.com.tw

QW-R203-018. M



SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable

operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Fig. 4 is based on TC = 25°С; TJ(PK) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC≥25°С. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 4 may be found at any case

temperature by using the appropriate curve on Fig. 6.

TJ(PK) may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,

with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe

level at or below a specific value of collector current. This can be accomplished by several means such as active

clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe

Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified

under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete

RBSOA characteristics.

MJE13005G-D-TN3-R Datasheet(PDF) 8 Page - Unisonic Technologies