DATA SHEET

SILICON TRANSISTOR

2SC3355

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No. P10355EJ3V1DS00 (3rd edition)

Date Published March 1997 N

Printed in Japan

1985

©

DESCRIPTION

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise

amplifier at VHF, UHF and CATV band.

It has lange dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain

• High Power Gain

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

600

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

120

300

Gain Bandwidth Product

6.5

GHz

Output Capacitance

0.65

1.0

pF

Insertion Power Gain

9.5

dB

Noise Figure

NF

1.1

dB

Noise Figure

NF

1.8

3.0

dB

Class

K

Marking

K

50 to 300

PACKAGE DIMENSIONS

in millimeters (inches)

5.2 MAX.

(0.204 MAX.)

0.5

(0.02)

2.54

(0.1)

1.

2.

3.

Base

Emitter

Collector

EIAJ

JEDEC

IEC

: SC-43B

: TO-92

: PA33

1.27

(0.05)

12

3