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2SC5194 Datasheet(PDF) 1 Page - NEC |
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2SC5194 Datasheet(HTML) 1 Page - NEC |
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1 / 10 page  © 1994 DATA SHEET SILICON TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion (Unit: mm) • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5194-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5194-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 100 mA Total Power Dissipation PT 150 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C 2SC5194 This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2.1±0.2 1.25±0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Document No. P10397EJ2V0DS00 (2nd edition) (Previous No. TD-2487) Date Published August 1995 P Printed in Japan |
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