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2SC5195 Datasheet(PDF) 3 Page - NEC

Part # 2SC5195
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF  10 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5195 Datasheet(HTML) 3 Page - NEC

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2SC5195
3
050
Ambient Temperature TA (°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
100
150
50
100
150
0
0.5
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 1 V
1
0.01
0.1
1
10
100
0.1
1
0.2
2
20
50
5
0.5
Collector Current IC (mA)
10
100
100
0
200
VCE = 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
2.5
5
7
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
20
30
5
15
25
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
µ
0
1
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
7
23
5
10
20
5
10
0
1
Collector Current IC (mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
7
23
5
10
20
5
10
TYPICAL CHARACTERISTICS (TA = 25
°C)



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