©

1994

DATA SHEET

SILICON TRANSISTOR

FEATURES

PACKAGE DRAWINGS

•

Low Voltage Operation, Low Phase Distortion

(Unit: mm)

•

Low Noise

•

Large Absolute Maximum Collector Current

•

Supercompact Mini Mold Package

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

2SC5195

In-bulk products

Embossed tape 8 mm wide.

(50 pcs.)

Pin 3 (Collector) face to perforation side of

2SC5195-T1

Taped products

the tape.

(3 Kpcs/Reel)

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

100

mA

Total Power Dissipation

125

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

2SC5195

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

2

1

3

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

1.6±0.1

0.8±0.1

Document No. P10398EJ2V0DS00 (2nd edition)

(Previous No. TD-2488)

Date Published August 1995 P

Printed in Japan