GP801FSM18

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

FEATURES

s

Low V

CE(SAT)

s

800A Per Switch

s

High Thermal Cycling Capability

s

Non Punch Through Silicon

s

Isolated MMC Base with AlN Substrates

APPLICATIONS

s

High Reliability

s

Motor Controllers

s

Traction Drives

s

Low Loss System Retrofit

The Powerline range of high power modules includes dual

and single switch configurations covering voltages from 600V to

3300V and currents up to 4800A.

The GP801FSM18 is a single switch 1800V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module.

Designed with low V

CE(SAT)

to minimise conduction

losses, the module is of particular relevance in low to medium

frequency applications. The IGBT has a wide reverse bias safe

operating area (RBSOA) ensuring reliability in demanding

applications.

This device is optimised for traction drives and

other applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP801FSM18

Note: When ordering, please use the complete part number.

KEY PARAMETERS

V

CES

1800V

V

CE(sat)

(typ)

2.6V

I

C

(max)

800A

I

C(PK)

(max)

1600A

GP801FSM18

Hi-Reliability Single Switch Low V

DS5401-1.1 January 2001

Fig. 1 Single switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: F

(See Package Details for further information)

C2

C1

Aux C

G

Aux E

E1

E2

External connection

External connection

C1

E1

C2

E2

G

Aux E

Aux C