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GP801FSM18 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # GP801FSM18
Description  Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
PDF  10 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP801FSM18 Datasheet(HTML) 4 Page - Dynex Semiconductor

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GP801FSM18
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
1200
350
600
400
300
400
240
-
-
Typ.
1000
250
500
300
200
300
180
450
120
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 800A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
I
F = 800A, VR = 50% VCES,
dI
F/dt = 3500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Max.
1400
400
700
550
350
550
400
-
-
Typ.
1200
300
600
400
250
450
300
525
190
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C = 800A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
I
F = 800A, VR = 50% VCES,
dI
F/dt = 3000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC



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