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MSF6N40 Datasheet(PDF) 2 Page - Bruckewell Technology LTD

Part # MSF6N40
Description  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MSF6N40 Datasheet(HTML) 2 Page - Bruckewell Technology LTD

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MSF6N40
N-Channel Enhancement Mode Power MOSFET
Publication Order Number: [MSF6N40]
© Bruckewell Technology Corporation Rev. A -2014
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
TL
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
300
°C
TPKG
Maximum Temperature for Soldering @ Package Body for 10
seconds
260
°C
PD
Total Power Dissipation (TC=25°C)
Derating Factor above 25 °C
38
W
0.3
W/°C
TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TJ
Storage Temperature
150
°C
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=5.5A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤5.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Characteristics
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
3.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Static Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
VGS
VDS = VGS, ID = 250μA
2.0
4.0
V
*RDS(ON)
VGS = 10 V , ID = 2.75 A
--
0.8
1.0
Ω
BVDSS
VGS = 0 V , ID = 250μA
400
--
--
V
△BV
DSS /△TJ
ID = 250μA, Referenced to 25°C
0.4
IDSS
VDS = 400 V , VGS = 0 V
VDS = 320 V , VGS = 0 V , Tj= 125°C
--
--
1
10
uA
IGSSF
VDS = 30 V, VDS = 0 V
100
nA
IGSSR
VDS = -30 V, VDS = 0 V
--
--
-100
nA
Dynamic Characteristics
Symbol
Test Conditions
Min
Typ.
Max.
Units
td(on)
VDS = 200 V, ID = 5.5 A,
RG = 25 Ω
--
20
50
ns
tr
--
50
110
ns
td(off)
--
90
190
ns
tf
--
55
120
ns



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