MSF6N40 datasheet(3/6 Pages) BWTECH

Part #	MSF6N40

Description	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	BWTECH [Bruckewell Technology LTD]

Direct Link	http://www.bruckewell-semi.com

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3 / 6 page

MSF6N40

N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MSF6N40]

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

CISS

VDS = 25 V, VGS = 0 V,

f = 1.0MHz

670

870

COSS

125

CRSS

VDS = 320 V,ID = 5.5 A,

VGS = 10 V

Qgs

5.0

Qgd

10.0

Source-Drain Diode Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

5.5

ISM

VSD

IF = 5.5 A , VGS = 0

1.5

trr

IF = 5.5 A , VGS = 0 , dIF/dt=100A/μs

220

Qrr

Notes;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=5.5 A, VDD=50V, RG=25W, Starting TJ =25°C

3. ISD≤5.5 A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C

4. Pulse Test : Pul

se Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

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