Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.46

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.55

VGS = 10V, ID = 5.5A„

On-State Resistance

—

—

0.63

VGS = 10V, ID = 8.7A

VGS(th)

GateThreshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

4.9

—

—

S ( )VDS ≥ 15V, IDS = 5.5A „

IDSS

Zero Gate Voltage Drain Current

—

—

25

—

—

250

VDS = 0.8 x max. rating

VGS = 0V, TJ = 25°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

32

—

65

VGS = 10V, ID = 8.7A

Qgs

Gate-to-Source Charge

2.2

—

10

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

13.8

—

40.5

see figures 6 and 13

td(on)

Turn-On DelayTime

—

—

25

VDD = 200V, ID = 8.7A, RG = 9.1Ω

tr

Rise Time

—

—

92

VGS = 10V

td(off)

Turn-Off DelayTime

—

—

79

tf

Fall Time

—

—

58

see figure 10

LD

Internal Drain Inductance

—

8.7

—

LS

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

1400

—

VGS = 0v, VDS = 25V

Coss

Output Capacitance

—

350

—

pF

f = 1.0MHz.

Crss

ReverseTransfer Capacitance

—

230

—

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC Junction-to-Case

—

—

1.25

RthJA Junction-to-Ambient

—

—

80

K/W

…

Typical socket mount

RthCS Case-to-Sink

—

0.21

—

Mounting surface flat, smooth

µA

nC

nH

ns

Measured from the drain

lead, 6mm (0.25 in.) from

package to center of die.

Measured from the

source lead, 6mm (0.25

in.) from package to

source bonding pad.

Modified MOSFET symbol

showing the internal

inductances.

nA

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

8.7

ISM

Pulse Source Current (Body Diode)



——

35

VSD

Diode Forward Voltage

—

—

1.5

V

trr

Reverse RecoveryTime

—

—

600

ns

Tj = 25°C, IF = 8.7A, di/dt ≤ 100 A/µs

QRR

Reverse Recovery Charge

—

—

5.6

µC

VDD ≤ 50 V „

ton

ForwardTurn-OnTime

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.

IRFY340CM Device

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

A

Ω

see figure 5

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